MITSUBISHI SEMICONDUCTOR GaAs FET
FA01219A
GaAs FET HYBRID IC
DESCRIPTION
FA01219A is RF Hybrid IC designed for 0.8GHz band
small size handheld radio.
1
Unit:mm
GND
8
FEATURES
鈥?Low voltage
鈥?High gain
鈥?High efficiency
鈥?High power
3.5V
22.5B
50%
30.5dBm
2
7
3
6
4
5
APPLICATION
PDC0.8GHz
GND
10.0
0.8
2.0
6.0
1
RF INPUT
2
V
D1
3
4
5
6
GND
V
D2
RF OUTPUT
GND
7
GND
8
V
G1,2
tolerance:鹵0.2
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D
P
in
T
C
(op)
T
stg
Parameter
Drain voltage
Input power
Operation case temperature
Storage temperature
Condition
Po鈮?0.5dBm
Z
G
=Z
L
=50鈩?/div>
Tc
25藲C
25藲C
鈥?/div>
鈥?/div>
Ratings
4.5
15
-20 to +85
-30 to +90
Unit
V
dBm
藲C
藲C
Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec
ELECTRICAL CHARACTERISTICS
(T
a
=25藲C)
Symbol
Parameter
Test conditions
Min
925
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Limits
Typ
鈥?/div>
5
640
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
958
8
720
-6
-47
-62
-30
-30
Unit
MHz
dBm
mA
dB
dBc
dBc
dBc
dBc
f
Frequency
Input power
P
in
I
Dt
Total drain current
Return loss
蟻in
鹵50kHz adjacent channel power
ACP50
ACP100 鹵100kHz adjacent channel power
2nd harmonics
2fo
3rd harmonics
3fo
Po=30.5dBm
V
D1
=V
D2
=3.5V
V
G1,2
=-2.5V
Z
G
=Z
L
=50鈩?/div>
(蟺/4DQPSK)
Ditto
(CW)
Nov. 麓97
FA01219A相關(guān)型號(hào)PDF文件下載
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型號(hào)
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