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F6492 Datasheet

  • F6492

  • LONG SCALE MICROCHANNEL PLATE

  • 2頁

  • HAMAMATSU

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LONG SCALE
MICROCHANNEL PLATE
F6492
Very Long (Effective Area: 127
This new long-scale MCP allows for continuous detection
of wide range position information without dead space cor-
rection. This new configuration promises reliable measure-
ment, and is well suited for double-focusing mass spec-
trometers. Assembled configurations are also available
upon request.
4mm)
FEATURES
Long Scale (Effective Area: 127mm 4mm)
Simultaneous Multielement Measurement Possible
Sensitive to Ions, Electrons, UV Radiation,
Soft X-rays, -rays and High Energy Particles
High Gain (1 10
4
)
TMCPF0064
APPLICATIONS
SIMS (Secondary Ions Mass Spectrometers)
UV Spectrometers
X-ray Spectrometers
Electron Spectrometers
GENERAL
Parameter
Outer Dimension
Electrode Dimension
Effective Area Dimension
Thickness
Channel Diameter
Channel Pitch
Bias Angle
Open Area Ratio
Electrode Material
Parameter
Current Gain Min.
Plate Resistance
Maximum Dark Current
Maximum Linear Output Current
Parameter
Supply Voltage
Ambient Temperature
NOTE:
Description/Value
140 9
138 8
127 4
0.48
12
15
8
60
Inconel
Discription/Value
1 10
4
10 to 100
5 10
-13
up to 7% of the strip current
Discription/Value
1000
-50 to +50
Unit
mm
mm
mm
mm
m
m
%
鈥?/div>
Unit
鈥?/div>
M
A/cm
2
鈥?/div>
Unit
V
Figure 1: Typical Current Gain
10
5
TMCPB0036EA
10
4
CHARACTERISTICS
(at 1000V, 1.3 10
-4
Pa (1 10
-6
Torr), 25 )
CURRENT GAIN
10
3
10
2
500
MAXIMUM RATINGS
(Absolute Values)
600
700
800
900
1000
1100
: Strip current is current flowing through the channel walls, which supplies
the current released from the channel walls. It is given by: Supply voltage
/ Plate resistance.
: At a vacuum of 1.3 10
-4
Pa (1 10
-6
Torr) or better.
SUPPLY VOLTAGE (V)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1996 Hamamatsu Photonics K.K.

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