鈥?/div>
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
The F5H2201 consists of two chips which are equivalent to the 2SC6082 encapsulated in a package.
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (PW=1s)
Collector Current (PW=100ms)
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
IC
IC
ICP
IB
PC
PT
Tj
Tstg
Duty cycle鈮?%
Duty cycle鈮?%
PW鈮?0碌s, duty cycle鈮?0%
Conditions
Ratings
60
60
50
6
10
12
15
20
3
2
Tc=25擄C, 1unit
Tc=25擄C
25
28
150
--55 to +150
Unit
V
V
V
V
A
A
A
A
A
W
W
W
擄C
擄C
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
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