F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
DESCRIPTION
鈥?The F5D series is a 880 nm LED in a
narrow angle, TO-46 package.
0.030 (0.76)
NOM
0.255 (6.48)
FEATURES
1.00 (25.4)
MIN
鈥?Good optical to mechanical alignment
ANODE
(CASE)
鈥?Mechanically and wavelength matched
to the TO-18 series phototransistor
鈥?Hermetically sealed package
鈥?High irradiance level
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
0.100 (2.54)
0.050 (1.27)
1
1
0.040 (1.02)
0.040 (1.02)
45擄
3
脴0.020 (0.51) 2X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of 鹵 .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/擄C above 25擄C ambient.
2. Derate power dissipation linearly 13.0 mW/擄C above 25擄C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16鈥?/div>
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2
!
steradians.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 10碌s; 100Hz)
Forward Current (pw, 1碌s; 200Hz)
Reverse Voltage
Power Dissipation (T
A
= 25擄C)
(1)
Power Dissipation (T
C
= 25擄C)
(2)
(T
A
= 25擄C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
I
F
V
R
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
3
10
3
170
1.3
Unit
擄C
擄C
擄C
擄C
mA
A
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25擄C) (All measurements made under pulse conditions)
MIN
TYP
MAX
UNITS
SYMBOL
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power F5D1
(7)
Total Power F5D2
(7)
Total Power F5D3
(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
"
P
#
V
F
I
R
P
O
P
O
P
O
t
r
t
f
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
12.0
9.0
10.5
鈥?/div>
鈥?/div>
880
鹵8
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.5
1.5
鈥?/div>
鈥?/div>
1.7
10
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
nm
Deg.
V
碌A(chǔ)
mW
mW
mW
碌s
碌s
錚?/div>
2001 Fairchild Semiconductor Corporation
DS300286
4/24/01
1 OF 3
www.fairchildsemi.com
next
F5D1 產(chǎn)品屬性
500
光電元件
紅外發(fā)射極
F5D
100mA
-
880nm
-
16°
頂視圖
通孔
TO-46-2 透鏡頂部金屬罐
散裝
F5D1GEF5D1QTF5D1QT-ND
F5D1相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
AlGaAs INFRARED EMITTING DIODE
FAIRCHILD
-
英文版
AIGAAS INFRARED EMITTING DIODE
QT
-
英文版
AlGaAs INFRARED EMITTING DIODE
FAIRCHILD ...
-
英文版
AIGAAS INFRARED EMITTING DIODE
QT [QT Opt...