F50N06LE Datasheet

IC型號：
F50N06LE
PDF描述：
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
文件大小：
414.71KB
PDF頁數(shù)：
8頁
芯片廠家：
INTERSIL

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RFG50N06LE, RFP50N06LE, RF1S50N06LESM

Data Sheet

October 1999

File Number

4072.3

50A, 60V, 0.022 Ohm, Logic Level

N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers, and relay

drivers. These transistors can be operated directly from

integrated circuits.

Formerly developmental type TA49164.

Features

鈥?50A, 60V

鈥?r

DS(ON)

= 0.022鈩?/div>

鈥?Temperature Compensating PSPICE

廬

Model

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?175

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFG50N06LE

RFP50N06LE

RF1S50N06LESM

PACKAGE

TO-247

TO-220AB

TO-263AB

BRAND

FG50N06L

FP50N06L

F50N06LE

Symbol

NOTE: When ordering, use the entire part number. Add the suf鏗亁 9A

to obtain the TO-263AB variant in tape and reel, i.e.

RF1S50N06LESM9A.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN (FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE廬 is a registered trademark of MicroSim Corporation.

www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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F50N06LE

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50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

F50N06LE
F50N06LE

英文版

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

INTERSIL [...

F50N06LE

F50N06LE Datasheet

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