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F4655-12 Datasheet

  • F4655-12

  • COMPACT MCP ASSEMBLY FOR TOF

  • 2頁

  • HAMAMATSU

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COMPACT MCP ASSEMBLY
FOR TOF
(TIME OF FLIGHT)
F4655-12
High Speed Detection of Positive / Negative Ion or Electron
FEATURES
Detection of Positive/Negative lon or Electron
High Speed Response
High Gain
High S/N Ratio
High Pulse Height Resolution
Wide Dynamic Range
Compact and Lightweight
APPLICATION
TOF Detector
TMCPF0068
F4655-12 is the best suited detector for a TOF measurement with positive/negative ion or electron. It allows to detect a charged
particles (ions, electron, etc.) having any polarity in a high speed with keeping a high gain and wide dynamic range of F4655
series. Its output will give a high speed output waveform without a ringing. In addition, the potential of output connector can be
the ground even an MCP anode is high voltage like an electron detection due to a coupling capacitor, which allows the handling
very easy.
SPECIFICATIONS
GENERAL
Parameter
Assembly Outer Diameter
Effective Diameter
Maximum Height
MCP Channel Diameter
MCP Stage Number
Description/Value
50.0
14.5
35.2
12
2
Description/Value
2.5
0.5
3.0
1.3 10
-3
(1 10
-5
)
+10 to +40
鈥?/div>
*
鈥?/div>
*
鈥?/div>
*
Unit
mm
mm
mm
m
stage
Unit
kV
kV
kV
Pa (Torr)
MAXIMUM RATINGS
Parameter
MCP Supply Voltage (In-Out)
MCP Out - Anode Voltage
Electric Potential of Each Terminal
Operating Vacuum Condition
Ambient Temperature
Baking Temperature
Baking Time
Vacuum Condition for Baking
F4655-12 is not allowed to be baked.
Parameter
Gain at 2.4 kV
Pulse Height Resolution (FWHM) at 2.4 kV
Plate Resistance (2-stage MCP)
Maximum Linear Output
Dark Count at 2.4 kV
Rise Time
Pulse Width (FWHM)
hours
Pa (Torr)
*
TYPICAL CHARACTERISTICS
(Vacuum condition 1.3 10
-4
Pa (1 10
-6
Torr), Ambient Temperature: +25 )
Description/Value
5 10
7
50
60 to 140
1
3
400
750
Unit
鈥?/div>
% Max.
M
A
cps/cm
2
ps
ps
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein.
1995 Hamamatsu Photonics K.K.

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