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F4655-01 Datasheet

  • F4655-01

  • WIDE DYNAMIC RANGE MCP ASSEMBLY FOR HELIUM LEAK DETECTOR

  • 2頁

  • HAMAMATSU

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PRELIMINARY DATA
MAY 1998
WIDE DYNAMIC RANGE
MCP ASSEMBLY
FOR HELIUM LEAK DETECTOR
F4655-01
Compact MCP assembly optimized for helium leak detector and
mass spectrometer using a wide dynamic range MCP
The F4655-01 is a very compact MCP assembly developed for
helium leak detector as well as mass spectrometer. It uses a
wide dynamic range MCP for extracting a high output current of
10碌A(chǔ)* with high stability.
* : At an MCP resistance of 20M鈩?/div>
TMCPF0089
FEATURES
Wide dynamic range
Compact and lightweight
Good cost performance
APPLICATIONS
Helium leak detector
Mass spectrometer
SPECIFICATIONS
GENERAL
Parameter
Assembly Outer Diameter
Effective Diameter
Maximum Height
MCP Channel Diameter
Number of MCP Stages
A
Value
30.0
14.5
8.5
12
1
A
Unit
mm
mm
mm
碌m
-
Figure 1: MCP Output Linearity Characteristiscs
150
TMCPB0080EA
Two-stage MCP type is also available on request.
MAXIMUM RATINGS (Absolute Values)
RELATIVE GAIN (%)
Wide Dynamic Range
MCP (1 stage)
MCP Supply Voltage (In-Out)
MCP-Out to Anode Voltage
Electric Potential at Each
Terminal
Operating Vacuum Condition
Baking Temperature
Baking Time
Baking Vacuum Condition
B
1
0.5
MCP-In: -1.5
MCP-Out: -0.5
Anode: GND
-4
-6
6.7脳10 (5脳10 )
-
B
-
B
-
B
-4
-6
4
kV
kV
kV
Pa (Torr)
擄C
h
Pa (Torr)
100
CONVENTIONAL
MCP (2 stage)
Wide Dynamic Range
MCP (2 stage)
50
Baking cannot be performed.
0
10
-8
10
-7
10
-6
10
-5
10
-4
CHARACTERISTICS (at 1.3脳10 Pa (1脳10 Torr), Ta=+25擄C)
Gain
Plate Resistance
Dark Current
1脳10
5 to 50
0.5
-
M鈩?/div>
2
pA/cm
OUTPUT CURRENT (A)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject
to change without notice. No patent rights are granted to any of the circuits described herein.
1998 Hamamatsu Photonics K.K.

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