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InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux)

InGaAlP High Brightness LED (617nm, High Current and Flux)

F 2000D

Vorl盲ufige Daten / Preliminary Data

Wesentliche Merkmale

鈥?Optimierte Lichtauskopplung durch

Oberfl盲chenstrukturierung und Stromverteilung

鈥?Chipgr枚脽e 700 x 700

碌m

2

鈥?Wellenl盲nge (typ.) : 617 nm

鈥?Technologie:InGaAIP

鈥?Typ. Lichtflu脽: 20 lm @ 400 mA (gepulst, im

Golden Dragon

廬

Geh盲use).

Anwendungen

鈥?Ampeln

鈥?Hinterleuchtung (LCD, Handy, Schalter,

Tasten, Displays, Werbebeleuchtung,

Allgemeinbeleuchtung)

鈥?Beleuchtung im Automobilbereich

(z.B. Instrumentenbeleuchtung, Bremslichter

und Blinklichter)

鈥?Ersatz von Kleinst-Gl眉hlampen

鈥?Tragbare Beleuchtung

鈥?Fassadenbeleuchtung im Innen- und

Au脽enbereich

Typ

Type

F 2000D

Bestellnummer

Ordering Code

Q65110A0981

Feature

鈥?Optimized light extraction due to surface

structuring and current distribution

鈥?Chip size 700 x 700

碌m

2

鈥?Wavelength (typ.): 617 nm

鈥?Technology: InGaAIP

鈥?Typ. luminous flux: 20 lm @ 400 mA (pulsed, in

Golden Dragon

廬

package)

Applications

鈥?Traffic lights

鈥?Backlighting (LCD, cellular phones, switches,

keys, displays, illuminated advertising,general

lighting)

鈥?Automotive lighting (e.g. dashboard

backlighting, brake lights, turn signal lamps,

etc.)

鈥?Substitution of micro incandescent lamps

鈥?Portable light source

鈥?Indoor and outdoor commercial and residential

architectural lighting

Beschreibung

Description

Rot emittierender Chip mit optimierter Lichtauskopplung

durch Oberfl盲chenstrukturierung, Oberseite Anodenan-

schluss

Red emitting chip with optimized light extraction due to sur-

face structuring, top side anode connection

2003-04-15

1

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