鈥?/div>
TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED 鈥淢USHROOM鈥?GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
SUPER LOW NOISE, HIGH GAIN AND HIGH
RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
O
EPB025A
Low Noise High Gain Heterojunction FET
420
50
104
D
D
48
260
40
S
G
G
S
90
59
50 78
ELECTRICAL CHARACTERISTICS (T
a
= 25 C)
SYMBOLS
NF
Ga
P
1dB
G
1dB
Idss
Gm
Vp
BVgd
BVgs
Rth
PARAMETERS/TEST CONDITIONS
Noise Figure
Vds=2V, Ids=15mA
Associated Gain
Vds=2V, Ids=15mA
Output Power at 1dB Compression
Vds=3V, Ids=25mA
Gain at 1dB Compression
Vds=3V, Ids=25mA
Saturated Drain Current
Transconductance
Pinch-off Voltage
f = 12GHz
f = 12GHz
f=12GHz
f=18GHz
f=12GHz
f=18GHz
Chip Thickness: 75
鹵
13 microns
All Dimensions In Microns
MIN
TYP
0.80
MAX
1.0
UNIT
dB
dB
dBm
dB
10.0
11.0
15.0
15.0
13.0
11.0
Vds=2V, Vgs=0V
Vds=2V, Vgs=0V
Vds=2V, Ids=1.0mA
20
50
50
80
-1.0
80
mA
mS
-2.5
V
V
V
o
Drain Breakdown Voltage Igd=10uA
Source Breakdown Voltage Igs=10uA
Thermal Resistance (Au-Sn Eutectic Attach)
-3
-3
-5
-5
155
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Drain-Source Voltage
5V
3V
Vds
Gate-Source Voltage
-3V
-3V
Vgs
Drain Current
Idss
Idss
Ids
Forward Gate Current
2mA
0.3mA
Igsf
Input Power
12dBm
@ 1dB Compression
Pin
o
Channel Temperature
175 C
150
o
C
Tch
Storage Temperature
-65/175
o
C
-65/150
o
C
Tstg
Total Power Dissipation
880mW
730mW
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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