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EN29LV800B Datasheet

  • EN29LV800B

  • Eon Silicon Solution Inc. [8 Megabit (1024K x 8-bit / 512K ...

  • EON

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EN29LV800B
EN29LV800B
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
鈥?/div>
Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
鈥?/div>
High performance
- Access times as fast as 55 ns
鈥?/div>
Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
碌A
typical standby current (standard access
time to active mode)
鈥?/div>
Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
鈥?/div>
High performance program/erase speed
- Byte/Word program time: 8碌s typical
- Sector erase time: 500ms typical
鈥?/div>
Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
鈥?/div>
JEDEC Standard Embedded Erase and
Program Algorithms
鈥?/div>
JEDEC standard DATA# polling and toggle
bits feature
鈥?/div>
Single Sector and Chip Erase
鈥?/div>
Sector Unprotect Mode
鈥?/div>
Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
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Low Vcc write inhibit < 2.5V
鈥?/div>
Minimum 100K endurance cycle
鈥?/div>
Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
鈥?/div>
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29LV800B is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8碌s. The
EN29LV800B features 3.0V voltage read and write operation, with access time as fast as 55ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29LV800B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
漏2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. G, Issue Date: 2006/05/16

EN29LV800B PDF文件相關型號

EN29LV800BB-55RBCP,EN29LV800BB-55RBI,EN29LV800BB-70BC,EN29LV800BB-70TC,EN29LV800BB-70TI,EN29LV800BB-90BC,EN29LV800BB-90TC,EN29LV800BT-90TCP

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