AH115 / ECP050G
錕?frac12; Watt, High Linearity InGaP HBT Amplifier
The Communications Edge
TM
Product Information
Product Features
x
1800 鈥?2300 MHz
x
+28.5 dBm P1dB
x
+44 dBm Output IP3
Product Description
The AH115 / ECP050 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+44 dBm OIP3 and +28.5 dBm of compressed 1-dB power.
All devices are 100% RF and DC tested. The AH115 /
ECP050 is available in lead-free/green/RoHS-compliant
SOIC-8 package.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH115 / ECP050 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
next generation multi-carrier 3G base stations.
Functional Diagram
1
8
7
6
5
2
3
4
x
14 dB Gain @ 1960 MHz
x
MTTF > 100 Years
x
+5V Single Positive Supply
x
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
x
Mobile Infrastructure
x
Final Stage Amplifier for
Repeaters
Function
Vref
Input / Base
Output / Collector
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside
Paddle
2, 4, 5
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance
(1)
Min
1800
12.5
2140
14.4
23
8
+28.5
+42
+22.5
+20
200
5.3
250
+5
300
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
Typ
Max
2300
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
@ -45 dBc ACLR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
1960
14.3
-12
-8
+28.3
+44
+22.5
+20
5
5.3
+5 V @ 250 mA
2140
14.4
-23
-8
+28.5
+42
+26.5
+41
W-CDMA Channel Power
Noise Figure
Supply Bias
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range
(3)
Device Voltage
1. Test conditions unless otherwise noted. 25潞C, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Ordering Information
Part No.
AH115-S8
ECP050G
AH115-S8G
AH115-S8PCB1960
AH115-S8PCB2140
Parameter
-40 to +85
qC
-65 to +150
qC
+22 dBm
+8 V
400 mA
2W
+250
qC
Rating
Description
(lead-tin SOIC-8 Pkg)
(lead-tin SOIC-8 Pkg)
錕?frac12; Watt, High Linearity InGaP HBT Amplifier
錕?frac12; Watt, High Linearity InGaP HBT Amplifier
1960 MHz Evaluation Board
2140 MHz Evaluation Board
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
錕?frac12; Watt, High Linearity InGaP HBT Amplifier
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
聽
聽
聽
聽
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
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May 2005
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