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EC30LA02 Datasheet

  • EC30LA02

  • Schottky Barrier Diode

  • 61.01KB

  • 6頁

  • NIEC

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SBD
Type
:
EC30LA02
OUTLINE DRAWING
FEATURES
* Miniature Size,Surface Mount Device
* Extremely Low Forward Voltage Drop
* Low Power Loss,High Efficiency
* High Surge Capability
* Packaged in 12mm Tape and Reel
* Not Rolling During Assembly
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Approx Net Weight:0.06g
Symbol
V
RRM
V
RRSM
I
o
I
F(RMS)
I
FSM
T
jw
T
stg
EC30LA02
20
25(pulse width
鈮?/div>
1碌s duty
鈮?/div>
1/50)
2.1
Ta=25擄C *1
50Hz Half Sine
Tl=85擄C Tl=Lead Wave Resistive
3.0
Load
Temperature
4.71
50Hz Half Sine Wave,1cycle
50
Non-repetitive
-40 to +125
-40 to +125
Conditions
Min. Typ. Max.
Unit
V
V
A
A
A
擄C
擄C
Unit
Electrical
鈥?/div>
Thermal Characteristics
Characteristics
Symbol
Peak Reverse Current
-
-
3
mA
I
RM
Tj= 25擄C, V
RM
= V
RRM
Peak Forward Voltage
-
-
0.39
V
V
FM
Tj= 25擄C, I
FM
= 3.0A
Thermal Junction to Ambient Rth
(j-a)
Alumina Substrate mounted *1
-
-
108
擄C
/W
Resistance Junction to Lead
-
-
-
23
Rth
(j-l)
*1: Alumina Substrate mounted (Soldering Lands=2x2mm,Both Sides)
The curves of Average Forward Current vs. Temperature are the value that do not consider Reverse Power
Dissipation.
In actual use, consider the Reverse Power Dissipation to avoid thermal runaway of the diode.

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