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EC2612 Datasheet

  • EC2612

  • 40GHz Super Low Noise PHEMT

  • 8頁

  • UMS

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EC2612
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility Transistor
Description
The EC2612 is based on a 0.15碌m gate
pseudomorphic high electron mobility
transistor (0.15碌m PHEMT) technology.
Gate width is 120碌m and the 0.15碌m
T-shaped aluminium gate features low
resistance and excellent reliability.
The device shows a very high
transconductance which leads to very high
frequency and low noise performances.
It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.
婁
Chip size : 0.63 x 0.37 x 0.1 mm
Main Features
婁
0.8dB minimum noise figure @ 18GHz
婁
1.5dB minimum noise figure @ 40GHz
婁
12dB associated gain @ 18GHz
婁
9.5dB associated gain @ 40GHz
D: Drain
G: Gate
S: Source
Main Characteristics
Tamb = +25擄C
Symbol
Idss
NFmin
Ga
Parameter
Saturated drain current
Minimum noise figure (F=40GHz)
Associated gain (F=40GHz)
8
Min
10
Typ
40
1.5
9.5
Max
60
1.9
Unit
mA
dB
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Electrical Characteristics
Tamb = +25擄C
Ref. : DSEC26120077 -17-Marc-00
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route D茅partementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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