SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=65A.
Zener Voltage : 27V(Typ.)
E65A27VBS, E65A27VBR
STACK SILICON DIFFUSED DIODE
A
POLARITY
E65A27VBS (+ Type)
E65A27VBR (- Type)
K
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Peak
Reverse Surge Current (10mS)
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
I
F(AV)
I
FSM
I
RSM
V
RSM
V
RM
T
j
T
stg
RATING
65
450 (60Hz)
65
20
20
-40 215
-40 215
UNIT
A
A
A
V
V
G
B
J D
F
E I
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
桅11.5
MAX
桅12.75+0.09-0.00
_
桅1.3
+ 0.04
_
4.2 + 0.2
_
8.0+ 0.2
TYP 0.5
_
桅10.0
+ 0.2
_
0.4 + 0.1x45
8.5 MAX
0.2+0.1
_
28.35+ 0.5
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Forward Voltage
Zener Voltage
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
Temperature Resistance
)
TEST CONDITION
I
FM
=100A
I
Z
=10mA
V
R
=20V
I
FM
=100A, I
M
=100mA, Pw=100mS
I
rsm
=65A, Pw=10mS
I
Z
=10mA
Ta=150 , V
R
=20V
DC total junction to case
MIN.
-
24
-
-
-
-
-
-
TYP.
-
27
-
-
-
15.7
-
-
MAX.
1.05
29
0.2
50
34
-
100
0.6
UNIT
V
V
A
mV
V
mV/
A
/W
V
F
SYMBOL
V
Z
I
R
V
F
V
br
T
HI
R
R
th
2002. 10. 9
Revision No : 0
1/1
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