SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=35A.
E35A23VS, E35A23VR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
D1
D2
B1
E
F
G
POLARITY
E35A23VS
(+ Type)
E35A23VR
(- Type)
T
C2
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Peak Reverse Surge Current
(I
RSM
/2=10ms)
Peak Revese Over Voltage
Peak Revese Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
I
F(AV)
I
FSM
I
RSM
V
RSM
V
RM
T
j
T
stg
RATING
35
450 (50Hz)
70
70
17
-40 200
-40 150
UNIT
A
A
A
V
V
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
_
10.0 + 0.3
_ 0.3
13.5 +
_
24.0 + 0.5
_
8.5 + 0.3
_
10.0 + 0.3
_
2.0 + 0.3
_
5.0 + 0.3
_
2.5 + 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
_
5.0 + 0.3
_ 0.3
4.5 +
_
1.9 + 0.3
_
9.0 + 0.3
_
1.0 + 0.3
_
4.4 + 0.5
_
0.6 + 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Peak Forward Voltage
Zener Voltage
Repetitive Peak Reverse Curren
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
Reverse recovery Time
Temperature Resistance
Thermal runway Temperature
Temperature Coefficient
SYMBOL
V
FM
V
Z
I
RRM
I
RRM
HI
R
Trr
Rth
Trwy
T
TEST CONDITION
I
FM
=100A
I
Z
=10mA
V
R
=V
RM
I
FM
=100A, Pw=100mS
Ta=150 , V
R
=V
RM
I
F
=100mA, -I
R
=100mA
90% Recovery Point
DC total junction to case
V
R
=17V, I
R
=5mA
I
R
=10mA
MIN.
-
20
-
-
-
-
-
200
-
TYP.
-
23
-
-
-
-
-
-
18
MAX.
1.05
26
10
90
2.5
5.0
1.0
-
-
C1
B2
Zener Voltage : 23V(Typ.)
UNIT
V
V
A
mV
mA
S
/W
mV/
2001. 2. 8
Revision No : 0
1/1
1
