SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E35A23VDS, E35A23VDR
STACK SILICON DIFFUSED DIODE
F
E
FEATURES
Average Forward Current : I
O
=35A.
Zener Voltage : 23V(Typ.)
POLARITY
E35A23VDS (+ Type)
E35A23VDR (- Type)
L1
G
B
A
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
I
F(AV)
I
FSM
V
RRM
T
j
T
stg
RATING
35
350
(10ms Condition)
17
-40 200
-40 200
UNIT
A
A
V
DIM MILLIMETERS DIM MILLIMETERS
_
_
A
9.5 + 0.2
E
3.1+ 0.1
_
+ 0.2
F
桅1.5
B
8.4
G
R0.5
C
1.2
_
L1
5 + 0.4
D
1
DIM TYPE POLARITY
S
L2
R
MILLIMETERS
_
19.0 + 1.0
_
23.0 + 1.0
PD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Peak Forward Voltage
Reverse Voltage
Repetitive Peak Reverse Current
Zener Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
Temperature Resistance
T
SYMBOL
V
FM
V
Z
I
RRM
TEST CONDITION
I
FM
=100A
I
R
=10mA
V
R
=17V
I
Z
=10mA
Ta=150 , V
R
=V
RM
Junction to case
MIN.
-
20
-
-
-
-
TYP.
-
23
-
0.077
-
0.8
MAX.
1.15
26
10
-
2.5
-
C
D
UNIT
V
V
A
%/
mA
/W
HI
R
R
th
2000. 7. 11
Revision No : 0
L2
1/1
1
