音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

E28F016XD-85 Datasheet

  • E28F016XD-85

  • 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

  • 54頁

  • INTEL   INTEL

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

E
n
n
n
n
n
n
28F016XD
16-MBIT (1 MBIT x 16)
DRAM-INTERFACE FLASH MEMORY
n
n
n
n
n
n
n
56-Lead TSOP Type I Package
Backwards-Compatible with 28F008SA
Command Set
2 碌A(chǔ) Typical Deep Power-Down Current
1 mA Typical I
CC
Active Current in Static
Mode
32 Separately-Erasable/Lockable
64-Kbyte Blocks
1 Million Erase Cycles per Block
State-of-the-Art 0.6 碌m ETOX鈩?IV Flash
Technology
85 ns Access Time (t
RAC
)
錚?/div>
Supports both Standard and Fast-
Page-Mode Accesses
Multiplexed Address Bus
錚?/div>
RAS# and CAS# Control Inputs
No-Glue Interface to Many Memory
Controllers
SmartVoltage Technology
錚?/div>
User-Selectable 3.3V or 5V V
CC
錚?/div>
User-Selectable 5V or 12V V
PP
0.33 MB/sec Write Transfer Rate
x16 Architecture
Intel鈥檚 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with
the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as
DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of
direct-execute code and mass storage data/file flash memory systems.
The 28F016XD鈥檚 DRAM-like interface with a multiplexed address bus, flexible V
CC
and V
PP
voltages, power
saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,
and selective block locking provide a highly flexible memory component suitable for resident flash component
arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows
for easy migration to flash memory in existing DRAM-based systems. The 28F016XD鈥檚 dual read voltage
allows the same component to operate at either 3.3V or 5.0V V
CC
. Programming voltage at 5.0V V
PP
minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V
PP
option maximizes
program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.
Its high read performance combined with flexible block locking enable both storage and execution of
operating systems/application software and fast access to large data tables. The 28F016XD is manufactured
on Intel鈥檚 0.6 碌m ETOX IV process technology.
December 1996
Order Number: 290533-004

E28F016XD-85相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！