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DWS24-45A Datasheet

  • DWS24-45A

  • Rectifier Diodes & FRED

  • 22頁(yè)

  • IXYS   IXYS

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

Contents
Symbols and Definitions
Nomenclature
General Information
Assembly Instructions
FRED, Rectifier Diode and Thyristor Chips in Planar Design
Page
2
2
3
4
5
IGBT Chips
V
CES
G-Series, Low V
CE(sat)
B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT魯 technology
600 ...1200 V
600 V
600 V
1200 ... 1700 V
I
C
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
6
6
6
7
MOSFET Chips
V
DSS
HiPerFET
TM
Power MOSFET
PolarHT
TM
MOSFET, very Low R
DS(on)
P-Channel Power MOSFET
N-Channel Depletion Mode MOSFET
Layouts
70 ...1200 V
55 ... 300 V
-100 ...-600 V
500 ...1000 V
R
DS(on)
0.005 ... 4.5
鈩?/div>
0.015 ... 0.135
鈩?/div>
0.06 ... 1.2
鈩?/div>
30 ... 110
鈩?/div>
8-10
11
12
12
13-17
Bipolar Chips
V
RRM
/ V
DRM
Rectifier Diodes
FREDs
Low Leakage FREDs
SONIC-FRD
TM
Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
1200 ... 1800 V
600 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 600 V
8 ... 200 V
800 ... 2200 V
1600 ... 1800 V
I
F(AV)M
/ I
T(AV)M
12 ... 416 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
18-19
20-21
22-23
24-25
26-27
28-31
32-33
34
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates
What is DCB/DAB?
DCB Specification
35
36
IXYS reserves the right to change limits, test conditions and dimensions
1

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