Ordering number : EN2171C
Silicon Epitaxial Planar Type
DWA010
Ultrahigh-Speed Switching Diode
Features
鈥?Ideally suited for use in hybrid ICs because of ultrasmall package.
鈥?High switching speed.
鈥?Small interterminal capacitance.
Absolute Maximum Ratings
at Ta=25擄C
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
VRM
VR
IFM
IFM
*
Io
Io
*
IFSM
1碌s
IFSM
*
P
Tj
Tstg
* : Total value
85
80
300
450
100
150
4
6
200
125
鈥?5 to +125
unit
V
V
mA
mA
mA
mA
A
A
mW
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Forward Voltage
VF1
VF2
VF3
IR1
IR2
C
trr
min
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50鈩? Irr=0.1Irp
typ
0.61
0.74
max
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Marking : W8
1.20
0.1
0.5
2.0
4.0
unit
V
V
V
碌A(chǔ)
碌A(chǔ)
pF
ns
Reverse Recovery Time Test Circuit
Package Dimensions
1164A
(unit : mm)
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
82597GI/41096GI/93094MO/2279TA, TS No.2171-1/2
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