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an
AMP
company
RF MOSFET Power Transistor, 3OW, 12V
2 - 175 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for
12
Volt Applications
. .
DUI 230s
Absolute Maximum Ratings at 25擄C
Parameter
1 Symbol
1
Rating
1 Units
1
Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
1 Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
I
VDS
V0s
鈥楧s
PO
TJ
I
40
20
8
175
200
-55to+150
V
V
A
I w I
鈥淐
鈥淐
I
T STG
BJCI
1
I 鈥淐/w
I
1
E
F
G
1 6.22
1 6.48
1 245
222
1
.llS
1 255
22s
1
,130
1
5.64
1 2.92
1
5.79
3.30
Electrical Characteristics at 25擄C
Input Capacitance
Output Capacitance
ReverseCapacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
C
0%
C Rss
GP
9D
V,,=12.0 V, F=l.O MHz
120
24
pF
pF
dB
%
-
V&2.0
V&2.0
V, F=l .OMHz
V, F=l .OMHz
9.0
50
-
-
-
3O:l
Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
V,,=l2.0
V, I,,=200 mA, PO,,=30 W, F=l75 MHz
VSWR-T
Specifications
Subject to ChangeWithoutNotice.
MIA-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Inc.
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
1
2
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