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an

AMP

comoanv

RF MOSFET Power Transistor, 8OW, 28V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device

DMOS Structure

Lower Capacitances for Broadband Operation

High Saturated Output Power

Lower Noise Figure Than Competitive Devices

DU2880T

Absolute Maximum Ratings at 25擄C

Thermal Resistance

Electrical Characteristics

I Parameter

Drain-Source

Drain-Source

Gate-Source

Breakdown

Voltage

at 25擄C

1 Symbol

BVDSS

1 Min

65

1 Max ( Units 1

-

4.0

4.0

V

mA

pA

V

S

pF

pF

PF

dB

%

-

V,,=O.O V, 1,,=20.0 mA

V,,=28.0

v,,=20.0

V&O.0

v,,=lo.o

V,,=28.0

V,,=28.0

V,,=28.0

V,,=28.0

V,,=28.0

V,,=28.0

V, V,,=O.O V

v, v,,=o.o

v

Test Conditions

Leakage Current

LeakageCurrent

鈥楧SS

鈥楪SS

V

GSITHI

GM

C ISS

C ass

%s

GP

%

VSWR-T

-

13

60

-

2.0

2.0

Gate Threshold Voltage

ForwardTransconductance

InputCapacitance

Output Capacitance

Reverse Capacitance

Power Gain

Drain Efficiency

Load Mismatch Tolerance

6.0

-

180

160

32

-

-

3O:l

V, 1,,=400.0 mA

V, 1,,=4.0 A, AV,,=l

V, F=l .O MHz

V, F=l .O MHz

V, F=l .O MHz

V, I,,=400

V. I,,=400

V, I,,=400

mA, P,,=80.0

mA, P,,=80.0

W, F=175 MHz

W, F=175 MHz

.O V, 80 us Pulse

mA, P,,,r=80.0 W, F=175 MHz

Specifications Subject to

Change Without Notice.

M/A-COM,

North America:

Tel. (BOO) 366-2266

Fax (800) 618-8883

n

inc.

Asia/Pacific:

Tel. +81 (03) 3226-1671

Fax +81 (03) 3226-1451

n

Europe:

Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

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