PDF預(yù)覽

• 1
• 2
• 3

an

AMP

company

==

z

I

RF M鈥橭SFET

2 - 175 MHz

Features

Power Transistor,

4OW,28V

DU2840S

N-Channel Enhancement Mode Device

DMOS Structure

Lower Capacitances for Broadband Operation

High Saturated Output Power

Lower Noise Figure Than Bipolar Devices

. .

Absolute Maximum Ratings at 25擄C

Parameter

Drain-Source

Gate-Source

Drain-Source

Voltage

Voltage

Current

1

1 Symbol

V DS

V GS

鈥?s

PD

T,

T STG

8 JC

1

(

Rating

65

20

Units

V

V

1

*

W

鈥淐

鈥淐

1

A

8

125

200

-55 to +150

1.4

Power Dissipation

JunctionTemperature

StorageTemperature

Thermal Resistance

24.64

24.09

.970

.980

B

i 18.29 t 18.54 1 ,720 1 ,730

D

鈥淐iW

E

9.47

&22

564

292

9.73

6.48

5.79

3.30

-373

.245

,222

.115

,393

255

E28

.I30

F

m-

G

Electrical Characteristics

Parameter

Drain-Source

I~~~

Drain-Source

Gate-Source

Breakdown

Voltage

at 25擄C

)

)

Symbol

BV,,,

鈥楧SS

鈥?5s

V GSrnHI

GM

C 15s

C 055

I

1 Min

1

55

1 Max

1

-

2.0

2.0

( Units

)

V

mA

pA

V

S

pF

pF

pF

1 dB

%

-

)

) V,,=O.OV,

V,,=28.0

v,,=20.0

V,,=lO.O

V,,=lO.O

V,=28.0

V,,=28.0

V,,=28.0

1 V,,=28.0

V,,=28.0

V,,=28.0

l,,=lO.OmA

V, V,,=O.O V

Test Conditions

I

I

Leakage Current

Leakage Current

v, v,,=o.o

v

Gate Threshold Voltage

ForwardTransconductance

Input Capacitance

Output Capacitance

Reverse Capacitance

Power Gain

Drain Efficiency

Load MismatchTolerance

Specifications

2.0

1

6.0

-

90

80

16

V, 1,,=200.0 mA

V,

1,,=2000.0

V, F=l .O MHz

V. F=l .O MHz

V, F=l .O MHz

V, I,,=200

V, I,,=200

V, I,,=200

mA, P,,,-40.0

_.

mA, P,,=40.0

mA, P,,=40.0

W, F=l75

MHz

I

mA,

AVo,=l .O

V, 80 us Pulse

C E1c.s

--

G,

鈥?D

1

13

60

-

-

-

3O:l

W, F=175 MHz

W, F=175 MHz

VSWR-T

Subject to Change Without Notice.

M/A-COM,

North

America:

Tel.

Fax

(800)

(800)

366-2266

618-8883

=

Asia/Pacific:

Tel.

Fax

+81 (03) 3226-1671

~81 (03) 3226-1451

=

Europe:

Tel.

Fax

+44 (1344)

+44 (1344)

inc.

869 595

300 020

next

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