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• 1
• 2
• 3

E

XF

.--

---

---

r

=

an

AMP

company

RF MOSFET Power Transistor,

2

-

175

MHz

Features

N-Channel Enhancement Mode Device

DMOS Structure

Lower Capacitances for Broadband Operation

High Saturated Output Power

Lower Noise Figure Than Bipolar Devices

12OW, 28V

DU28120T

Absolute Maximum Ratings at 25擄C

Parameter

Symbol

V DS

Rating

65

Units

V

Drain-Source Voltage

Gate-Source Voltage

Drain-Source

Current

Power Dissipation

Junction Temperature

StorageTemperature

Thermal Resistance

I

V cc

鈥楧S

I

20

24

I

V

*

I

PD

TJ

T

STG

8JC

269

200

-55 to+150

0.65

w

鈥淐

鈥淐

鈥淐/W

I

I

LETTER

DIN

A

B

c

D

I

I

-

m

24.64

lB29

2121

l2.60

622

ml

5.33

10s

I

I

rmcs

WI

24.99

1054

21.97

1285

640

4s

559

x33

I

3.30

I

I

ml

.970

720

83.5

I

lax

se0

no

865

I

I A% I .506 I

245

.tio

210

200

d20

1

255

.x0

220

2lo

.lr)

i

E

F

G

H

1

J

1

3.05

N

.lO

.lS

Electrical Characteristics

at 25擄C

Input Capacitance

Output Capacitance

Reverse Capacitance

PowerGain

C ES

C oss

C RSS

GP

13

60

-

270

240

48

-

-

3O:l

pF

pF

pF

dB

%

-

V,,=28.0

V,,=28.0

V,,=28.0

Vb,=28.0

V, F=l .O MHz

V, Fz1.0 MHz

V, F=l .O MHz

V. I,,=600

mA, P,,,.=120.0

W, F=175 MHz

MHz

Drain Efficiency

Load Mismatch Tolerance

鈥業(yè)D

VSWR-T

Vbb~28.0 V, I,,=600

V,,=28.0

V, I,,=600

mA, PO,?1 20.0 W, F=l75

mA, PO,,-120.0

W, F=175 MHz

Specifications Subject to Change

Wiihout Notice.

MIA-COM,

inc.

Tel. (800) 366-2266

Fax (800) 618-8883

m Asia/Pacific:

Tel. +81 (03) 3226-1671

Fax +81 (03) 3226-1451

Europe:

Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

North America:

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