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RF MOSFET Power Transistor, 6OW, 12V

2 - 175 MHz

Features

N-Channel Enhancement Mode Device

DMOS Structure

Lower Capacitances for Broadband Operation

High Saturated Output Power

Lower Noise Figure Than Bipolar Devices

Specifically Designed for 12 Volt Applications

DU1260T

v2.00

Absolute Maximum Ratings at 25擄C

Electrical Characteristics

at 25擄C

Specifications

Subject to Change Wiihout Notice.

M/A-COM,

inc.

Tel. (800) 366-2266

Fax (800) 618-8883

n

North America:

Asia/Pacific:

Tel. +81 (03) 3226-1671

Fax +81 (03) 3226-1451

n

Europe:

Tel. +44 (1344) 869 595

Fax +44 (1344) 300 020

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