RF MOSFET Power Transistor, ISW, 12V
2 - 175 MHz
Features
l
l
l
l
l
l
DU1215S
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications
. w
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
C ISS
C
OSS
-
9.5
60
-
50
60
pF
pF
pF
dB
%
-
VD,=12.0 V, F=l .O MHz
V&2.0
V&2.0
V, F=l .OMHz
V, F=l .OMHz
Gss
GP
%
VSWR-T
12
-
-
3O:l
V,,=12.0 V, lDcl=lOO
mA. PO*1 5 W, F=175 MHz
VD,=12.0 V, l&O0
mA, PO,=15 W, F=175 MHZ
VDD=12.0 I,,=100 mA, PO,=15 W, F=l75 MHz
V,
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020