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DTA114YE Datasheet

  • DTA114YE

  • Bias Resistor Transistor PNP Silicon Surface Mount Transisto...

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by DTA114YE/D
Preliminary Data Sheet
Bias Resistor Transistor
DTA114YE
3
2
1
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base鈥揺mitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 11 4 Y E i s h o u s e d i n t h e
SOT鈥?16/SC鈥?0 package which is ideal for low鈥損ower surface mount applications
where board space is at a premium.
鈥?/div>
Simplifies Circuit Design
鈥?/div>
Reduces Board Space
鈥?/div>
Reduces Component Count
鈥?/div>
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1)
R1
R2
CASE 463鈥?1, STYLE 1
SOT鈥?16/SC鈥?0
OUT (3)
GND (2)
R1 = 10 k鈩?/div>
R2 = 47 k鈩?/div>
MAXIMUM RATINGS
(TA = 25擄C unless otherwise noted)
Rating
Output Voltage
Input Voltage
Output Current
Symbol
VO
VI
IO
Value
鈥?50
鈥?0
鈥?00
Unit
Vdc
Vdc
mAdc
DEVICE MARKING
DTA114YE = 59
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25擄C(1)
Operating and Storage Temperature Range
Junction Temperature
PD
TJ, Tstg
TJ
*125
鈥?55 to +150
150
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C)
Characteristic
Input Off Voltage (VO = 鈥?.0 Vdc, IO = 鈥?00
碌A(chǔ)dc)
Input On Voltage (VO = 鈥?.3 Vdc, IO = 鈥?.0 mAdc)
Output On Voltage (IO = 鈥?.0 mAdc, II = 鈥?.25 mAdc)
Input Current (VI = 鈥?.0 Vdc)
Output Cutoff Current (VO = 鈥?50 Vdc)
DC Current Gain (VO = 鈥?.0 Vdc, IO = 鈥?.0 mAdc)
Input Resistance
Resistance Ratio
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R1/R2
Min
鈥?/div>
鈥?.4
鈥?/div>
鈥?/div>
鈥?/div>
68
7.0
0.17
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
0.21
Max
鈥?.3
鈥?/div>
鈥?.3
鈥?.88
鈥?00
鈥?/div>
13
0.25
Unit
Vdc
Vdc
Vdc
mAdc
nAdc
鈥?/div>
kOhms
1. Device mounted on a FR鈥? glass epoxy printed circuit board using the minimum recommended footprint.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1

DTA114YE 產(chǎn)品屬性

  • ON Semiconductor

  • Transistors Switching (Resistor Biased)

  • Single

  • PNP

  • 10 KOhms

  • 0.21

  • SMD/SMT

  • SC-75-3

  • 50 V

  • 0.1 A

  • 100 mA

  • 0.2 W

  • + 150 C

  • Reel

  • - 55 C

  • 3000

DTA114YE相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    1.0A Bidirectional Thyristor
    SANYO
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    1.0A Bidirectional Thyristor
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    1.0A Bidirectional Thyristor
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    1.0A Bidirectional Thyristor
    SANYO
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    1.0A Bidirectional Thyristor
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  • 英文版
    TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
  • 英文版
    TRIAC|400V V(DRM)|10A I(T)RMS|TO-220
  • 英文版
    TRIAC|500V V(DRM)|10A I(T)RMS|TO-220
  • 英文版
    TRIAC|600V V(DRM)|10A I(T)RMS|TO-220
  • 英文版
    Digital transistors (built-in resistors)
    ROHM
  • 英文版
    Digital transistors (built-in resistors)
    ROHM [Rohm...
  • 英文版
    Digital transistor (built in resistor)
  • 英文版
    Digital transistors (built-in resistors)
    ROHM
  • 英文版
    Digital transistors (built-in resistor)
  • 英文版
    Digital transistors (built-in resistor)
    ROHM [Rohm...
  • 英文版
    Digital transistors (built-in resistors)
  • 英文版
    DIGITAL TRANSISTOR
    ROHM
  • 英文版
    DIGITAL TRANSISTOR
    ROHM [Rohm...
  • 英文版
    TRIAC|200V V(DRM)|12A I(T)RMS|TO-220

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