DS 75
DSA 75
DSI 75
DSAI 75
Rectifier Diode
Avalanche Diode
V
RRM
= 800-1800 V
I
F(RMS)
= 160 A
I
F(AV)M
= 110 A
V
RSM
V
900
1300
1300
1700
1900
V
(BR)min
每
x
V
RRM
V
-
-
1300
1760
1950
V
800
1200
1200
1600
1800
Anode
on stud
DS 75-08B
DS 75-12B
DSA 75-12B
DSA 75-16B
DSA 75-18B
Cathode
on stud
DSI 75-08B
DSI 75-12B
DSAI 75-12B
DSAI 75-16B
DSAI 75-18B
DO-203 AB
C
A
DS
DSA
A
C
DSI
DSAI
x
Only for Avalanche Diodes
1/4-28UNF
A = Anode
C = Cathode
Symbol
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
case
= 100擄C; 180擄 sine
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10
ms
T
VJ
= 45擄C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
160
110
20
1400
1500
1250
1310
9800
9450
7820
7210
-40...+180
180
-40...+180
A
A
kW
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
擄C
擄C
擄C
Nm
lb.in.
g
Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
q
q
I
2
t
T
VJ
= 45擄C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Applications
High power rectifiers
Field supply for DC motors
Power supplies
q
q
q
q
q
q
T
VJ
T
VJM
T
stg
M
d
Weight
Mounting torque
q
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
2.4-4.5
21-40
21
Dimensions in mm (1 mm = 0.0394")
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 150 A; T
VJ
= 25擄C
Characteristic Values
攏
攏
6
1.17
0.75
2
0.5
0.9
4.05
3.9
100
mA
V
V
mW
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
T
VJ
= T
VJM
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
744
漏 2000 IXYS All rights reserved
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