DSEP 9-06CR
HiPerDynFRED
TM
Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
I
FAV
= 9 A
V
RRM
= 600 V
t
rr
= 15 ns
V
RSM
V
600
V
RRM
V
600
Type
A
C
ISOPLUS 247
TM
C
A
Isolated back surface *
DSEP 9-06CR
A = Anode, C = Cathode
* Patent pending
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 140擄C; rectangular, d = 0.5
t
P
< 10 碌s; rep. rating, pulse width limited by T
VJM
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25擄C; non-repetitive
I
AS
= 2 A; L = 180 碌H
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
50
9
tbd
80
0.5
0.2
-55...+175
175
-55...+150
A
A
A
A
mJ
A
擄C
擄C
擄C
W
V~
N
g
Features
鈥?Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
鈥?Low cathode to tab capacitance (< 25 pF)
鈥?International standard package
鈥?Planar passivated chips
鈥?Very short recovery time
鈥?Extremely low switching losses
鈥?Low I
RM
-values
鈥?Soft recovery behaviour
鈥?Epoxy meets UL 94V-0
鈥?Isolated and UL registered E153432
Applications
鈥?Antiparallel diode for high frequency
switching devices
鈥?Antisaturation diode
鈥?Snubber diode
鈥?Free wheeling diode in converters
and motor control circuits
鈥?Rectifiers in switch mode power
supplies (SMPS)
鈥?Inductive heating
鈥?Uninterruptible power supplies (UPS)
鈥?Ultrasonic cleaners and welders
Advantages
鈥?Avalanche voltage rated for reliable
operation
鈥?Soft reverse recovery for low EMI/RFI
鈥?Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
T
C
= 25擄C
50/60 Hz RMS; I
ISOL
鈮?/div>
1 mA
mounting force with clip
typical
150
2500
20...120
6
Symbol
I
R
鈶?/div>
Conditions
T
VJ
= 25擄C V
R
= V
RRM
T
VJ
= 150擄C V
R
= V
RRM
I
F
= 9 A;
T
VJ
= 150擄C
T
VJ
= 25擄C
Characteristic Values
typ.
max.
50
0.2
2.9
4.0
1
0.25
碌A(chǔ)
mA
V
V
K/W
K/W
ns
4.1
A
V
F
鈶?/div>
R
thJC
R
thCH
t
rr
I
RM
I
F
= 1 A; -di/dt = 200 A/碌s;
V
R
= 30 V; T
VJ
= 25擄C
V
R
= 100 V; I
F
= 10 A; -di
F
/dt = 100 A/碌s
T
VJ
= 100擄C
15
3.5
Pulse test:
鈶?/div>
Pulse Width = 5 ms, Duty Cycle < 2.0 %
鈶?/div>
Pulse Width = 300 碌s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
1-2
DSEP9-06CR 產(chǎn)品屬性
30
分離式半導(dǎo)體產(chǎn)品
單二極管/整流器
HiPerDynFRED™
標(biāo)準(zhǔn)
600V
9A
4V @ 9A
快速恢復(fù) = 200mA（Io）
15ns
50µA @ 600V
-
通孔，徑向
ISOPLUS247?
ISOPLUS247?
管件
Q1142267
DSEP9-06CR相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
-
英文版
Diode Standard 1200V (1.2kV) 15A Through Hole TO-220AC
-
英文版
HiPerFRED Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
IXYS [IXYS...
-
英文版
HiPerFREDTM Epitaxial Diode with soft recovery
IXYS [IXYS...
IXYS
1
2
