DSEP 30-06CR
HiPerDynFRED
TM
Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
Preliminary Data
V
RSM
V
600
V
RRM
V
600
DSEP 30-06CR
Type
A
C
I
FAV
= 30 A
V
RRM
= 600 V
t
rr
= 20 ns
ISOPLUS 247
TM
C
A
Isolated back surface *
A = Anode, C = Cathode
* Patent pending
Symbol
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 135擄C; rectangular, d = 0.5
t
P
< 10 碌s; rep. rating, pulse width limited by T
VJM
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25擄C; non-repetitive
I
AS
= 3 A; L = 180 碌H
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
tbd
300
1.2
0.3
-55...+175
175
-55...+150
A
A
A
A
mJ
A
擄C
擄C
擄C
W
V~
N
g
q
q
q
q
Features
q
T
C
= 25擄C
50/60 Hz RMS; I
ISOL
攏
1 mA
mounting force with clip
typical
250
2500
20...120
6
q
q
q
q
q
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<25pF)
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Isolated and UL registered E153432
Applications
q
Symbol
I
R
x
Conditions
T
VJ
= 25擄C V
R
= V
RRM
T
VJ
= 150擄C V
R
= V
RRM
I
F
= 30 A;
T
VJ
= 150擄C
T
VJ
= 25擄C
Characteristic Values
typ.
max.
250
1
1.79
2.46
0.6
0.25
20
4.5
7.0
碌A
mA
V
V
K/W
K/W
ns
A
q
q
q
V
F
y
R
thJC
R
thCH
t
rr
I
RM
q
q
q
q
with heatsink compound
I
F
= 1 A; -di/dt = 200 A/碌s;
V
R
= 30 V; T
VJ
= 25擄C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/碌s
T
VJ
= 100擄C
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
q
q
q
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300 碌s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
018
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2000 IXYS All rights reserved
1-1
IXYS
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