DSEP 30-04A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Preliminary Data
V
RSM
V
400
V
RRM
V
400
DSEP 30-04A
Type
A
C
I
FAV
= 30 A
V
RRM
= 400 V
t
rr
= 30 ns
TO-247 AD
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 140擄C; rectangular, d = 0.5
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25擄C; non-repetitive
I
AS
= tbd A; L = tbd 碌H
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
tbd
tbd
tbd
-55...+175
175
-55...+150
A
A
A
mJ
A
擄C
擄C
擄C
W
Nm
g
Applications
q
Features
q
q
q
q
q
q
q
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
T
C
= 25擄C
mounting torque
typical
165
0.8...1.2
6
q
q
q
Symbol
I
R
x
Conditions
T
VJ
= 25擄C V
R
= V
RRM
T
VJ
= 150擄C V
R
= V
RRM
I
F
= 30 A;
T
VJ
= 150擄C
T
VJ
= 25擄C
Characteristic Values
typ.
max.
250
1
1.11
1.46
0.9
0.25
mA
mA
V
V
K/W
K/W
ns
6.8
A
q
V
F
y
R
thJC
R
thCH
t
rr
I
RM
q
q
q
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
I
F
= 1 A; -di/dt = 300 A/ms;
V
R
= 30 V; T
VJ
= 25擄C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/ms
T
VJ
= 100擄C
30
5.5
Advantages
q
q
q
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
ms,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see outlines.pdf
漏 2000 IXYS All rights reserved
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008
IXYS reserves the right to change limits, test conditions and dimensions.
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