DSEP 15-06B
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Preliminary data
I
FAV
= 15 A
V
RRM
= 600 V
= 25 ns
t
rr
A
C
V
RSM
V
600
V
RRM
V
Type
TO-220 AC
C
600
DSEP 15-06B
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
D4
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
Conditions
T
C
= 130擄C; rectangular, d = 0.5
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25擄C; non-repetitive; I
AS
= 1 A;
L = 100 碌H
L = 20 mH
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
35
15
110
0.1
20
0.1
-55...+175
175
-55...+150
A
A
Features
A
G
G
mJ
mJ
A
擄C
擄C
擄C
W
Nm
g
G
G
G
G
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
G
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
T
C
= 25擄C
mounting torque
typical
95
0.4...0.6
2
Applications
G
G
G
G
Symbol
I
R
x
Conditions
T
VJ
= 25擄C V
R
= V
RRM
T
VJ
= 150擄C V
R
= V
RRM
I
F
= 15 A;
T
VJ
= 150擄C
T
VJ
= 25擄C
Characteristic Values
typ.
max.
100
0.5
1.55
2.52
1.6
0.5
碌A(chǔ)
mA
V
V
K/W
K/W
ns
A
G
G
G
G
V
F
y
R
thJC
R
thCH
t
rr
I
RM
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
G
I
F
= 1 A; -di/dt = 100 A/碌s;
V
R
= 30 V; T
VJ
= 25擄C
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/碌s
T
VJ
= 100擄C
25
30
2.6
G
G
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
碌s,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
漏 2001 IXYS All rights reserved
1-1
147
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS
1
