DSEC 30-06B
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
I
FAV
= 2x15 A
V
RRM
= 600 V
t
rr
= 25 ns
A
V
RSM
V
600
V
RRM
V
600
Type
A
C
TO-247 AD
DSEC 30-06B
A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
Conditions
T
C
= 135擄C; rectangular, d = 0.5
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25擄C; non-repetitive; I
AS
= 1 A;
L = 100 碌H
L = 20 mH
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
50
15
110
0.1
20
0.1
-55...+175
175
-55...+150
A
A
A
mJ
mJ
A
擄C
擄C
擄C
W
Nm
g
Features
鈥?International standard package
鈥?Planar passivated chips
鈥?Very short recovery time
鈥?Extremely low switching losses
鈥?Low I
RM
-values
鈥?Soft recovery behaviour
鈥?Epoxy meets UL 94V-0
Applications
鈥?Antiparallel diode for high frequency
switching devices
鈥?Antisaturation diode
鈥?Snubber diode
鈥?Free wheeling diode in converters
and motor control circuits
鈥?Rectifiers in switch mode power
supplies (SMPS)
鈥?Inductive heating
鈥?Uninterruptible power supplies (UPS)
鈥?Ultrasonic cleaners and welders
Advantages
鈥?Avalanche voltage rated for reliable
operation
鈥?Soft reverse recovery for low EMI/RFI
鈥?Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
= 25擄C
mounting torque
typical
95
0.8...1.2
6
Symbol
I
R
鈶?/div>
Conditions
T
VJ
= 25擄C; V
R
= V
RRM
T
VJ
= 150擄C;V
R
= V
RRM
I
F
= 15 A;
T
VJ
= 150擄C
T
VJ
= 25擄C
Characteristic Values
typ.
max.
100
0.5
1.54
2.51
1.6
0.25
碌A(chǔ)
mA
V
V
K/W
K/W
ns
A
V
F
鈶?/div>
R
thJC
R
thCH
t
rr
I
RM
I
F
= 1 A; -di/dt = 100 A/碌s;
V
R
= 30 V; T
VJ
= 25擄C
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/碌s
T
VJ
= 100擄C
25
30
2.6
Dimensions see Outlines.pdf
Pulse test:
鈶?/div>
Pulse Width = 5 ms, Duty Cycle < 2.0 %
鈶?/div>
Pulse Width = 300
碌s,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
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IXYS
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