HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Preliminary Data Sheet
V
RSM
V
600
600
V
RRM
V
600
600
DSEA 16-06BC
DSEC 16-06BC
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2
3
DSEA
I
FAV
V
RRM
t
rr
DSEA 16-06BC
DSEC 16-06BC
= 2x8 A
= 600 V
= 30 ns
ISOPLUS220
TM
E153432
2
3
Type
1
DSEC
G
D
S
Isolated back surface
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
T
L
P
tot
V
ISOL
F
C
Weight
Conditions
T
C
= 110擄C; rectangular, d = 0.5
T
VJ
= 45擄C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25擄C; non-repetitive
I
AS
= 0.9 A; L = 180 碌H
V
A
= 1.5路V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
19
8
50
0.1
0.1
-55...+175
175
-55...+150
A
A
A
mJ
A
擄C
擄C
擄C
擄C
W
V~
N / lb
g
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
1.6 mm (0.063 in) from case for 10 s
T
C
= 25擄C
50/60 Hz RMS; I
ISOL
鈮?/div>
1 mA
mounting force with clip
260
60
2500
11...65 / 2.5...15
2
Symbol
I
R
V
F
R
thJC
R
thCH
t
rr
I
RM
Conditions
T
VJ
= 25擄C V
R
= V
RRM
T
VJ
= 150擄C V
R
= V
RRM
I
F
= 8 A;
T
VJ
= 150擄C
T
VJ
= 25擄C
Characteristic Values
typ.
max.
60
0.25
1.65
3.0
2.5
0.4
碌A(chǔ)
mA
V
V
I
F
= 1 A; -di/dt = 50 A/碌s;
V
R
= 30 V; T
VJ
= 25擄C
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/碌s
T
VJ
= 100擄C
30
1.4
1.9
Notes: Data given for T
VJ
= 25
O
C and per diode unless otherwise specified
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
碌s,
Duty Cycle < 2.0 %
K/W
Advantages
K/W
Avalanche voltage rated for reliable
ns
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
A
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2005 IXYS All rights reserved
DS98825A (04/05)
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