DS9502
ESD Protection Diode
www.dalsemi.com
SPECIAL FEATURES
摟
Zener characteristic with voltage snap鈥揵ack
to protect against ESD hits
摟
High avalanche voltage, low leakage and low
capacitance avoid signal attenuation
SYMBOL AND CONVENTIONS
C
IC
VCA
A
摟
Compatible to all 5V logic families
摟
Space saving, low inductance TSOC surface
mount package
摟
Symmetric dual鈥損ort bondout to maximize
energy dissipation in protection device
摟
Industrial temperature range
3
4
TOP VIEW
3.7 X 4.0 X 1.5 mm
See Mech. Drawings
Section
PACKAGE OUTLINE
TSOC SURFACE MOUNT PACKAGE
1
2
6
5
SIDE VIEW
ORDERING INFORMATION
DS9502P
6-lead TSOC package
DESCRIPTION
This DS9502 was designed as an additional ESD protection for SRAM鈥揵ased battery鈥揵uffered portable
memory modules. The memory chips used for these modules have already a strong ESD鈥損rotection
structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than
27 kV (IEC 801鈥? Reference model). In case of abnormal ESD hits beyond its maximum ratings the
DS9502 will eventually fail 鈥渟hort鈥?thus preventing further damage.
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds
the trigger voltage, the I/V characteristic of the device will 鈥渟napback鈥?allowing the same or higher
amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage
is maintained, the device will stay in the 鈥渟napback mode鈥? If the voltage or the current falls below the
holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a
small leakage current.
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