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DS2016-150 Datasheet

  • DS2016-150

  • 2k x 8 3V/5V Operation Static RAM

  • 9頁

  • DALLAS   DALLAS

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DS2016
2k x 8 3V/5V Operation Static RAM
www.dalsemi.com
FEATURES
摟
摟
Low-power CMOS design
Standby current
鈭?/div>
50 nA max at t
A
= 25擄C V
CC
= 3.0V
鈭?/div>
100 nA max at t
A
= 25擄C V
CC
= 5.5V
鈭?/div>
1 碌A(chǔ) max at t
A
= 60擄C V
CC
= 5.5V
Full operation for V
CC
= 5.5V to 2.7V
Data retention voltage = 5.5V to 2.0V
Fast 5V access time
鈭?/div>
DS2016 - 100
100 ns
鈭?/div>
DS2016 - 150
150 ns
Reduced-speed 3V access time
鈭?/div>
DS2016 - 100
250 ns
鈭?/div>
DS2016 - 150
250 ns
Operating temperature range of -40擄C to
+85擄C
Full static operation
TTL compatible inputs and outputs over
voltage range of 5.5V to 2.7 volts.
Available in 24-pin DIP and 24-pin SOIC
packages
Suitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
摟
摟
摟
摟
摟
摟
摟
摟
摟
DS2016 24-Pin DIP (600-mil)
DS2016R 24-Pin SOIC (300-mil)
PIN DESCRIPTION
A0 - A10
DQ0 - DQ7
CE
WE
OE
V
CC
GND
- Address Inputs
- Data Input/Output
- Chip Enable Input
- Write Enable Input
- Output Enable Input
- Power Supply Input 2.7V - 5.5V
- Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (
CE
) is used for
device selection and can be used in order to achieve the minimum standby current mode, which facilitates
both battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8
SRAM and is pin-compatible with ROM and EPROM of similar density.
1 of 9
092399

DS2016-150 產(chǎn)品屬性

  • 16

  • 集成電路 (IC)

  • 存儲器

  • -

  • RAM

  • SRAM

  • 16K (2K x 8)

  • 150ns

  • 并聯(lián)

  • 2.7 V ~ 5.5 V

  • -40°C ~ 85°C

  • 24-DIP（0.600"，15.24mm）

  • 24-PDIP

  • 管件

DS2016-150相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    HIGH CURRENT / VOLTAGE DARLINGTON DRIVERS
    NSC [Natio...
  • 英文版
    HIGH CURRENT / VOLTAGE DARLINGTON DRIVERS
    NSC [Natio...
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC [Natio...
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC [Natio...
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC [Natio...
  • 英文版
    2k x 8 3V/5V Operation Static RAM
    DALLAS
  • 英文版
    2k x 8 3V/5V Operation Static RAM
    DALLAS [Da...
  • 英文版
    20 CHARACTERS * 2 LINES LIQUID CRYSTAL DOT MATRIX DISPLAY MO...
    SANYO [San...
  • 英文版
    8K x 8 Static RAM
    DALLAS
  • 英文版
    8K x 8 Static RAM
    DALLAS [Da...
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC [Natio...
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC [Natio...
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC [Natio...
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC
  • 英文版
    High Current/Voltage Darlington Drivers
    NSC [Natio...

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