Reliability Report:
Process:
Metal:
Al / 0.5% Cu / 0.8% Si
DS1808
Passivation w/Nov TEOS Oxide-Nitride
1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer,
Gate Ox Thickness:
Cf:
Ea:
尾:
225 脜
60%
0.7
0
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Tuse:
Vuse:
25
5.5
擄C
Volts
Pin Count:
Assembly:
Package:
Body Size:
16
ATP (Amkor, PI)
SOIC
150x1.4
DESCRIPTION
HIGH VOLTAGE LIFE
VEHICLE
DS1808
DS1808
REV DATE CODE
A2
A2
0133
0133
CONDITION
125C, 6.0 V (PSA) & +13.2 V (PS
125C, 6.0 V (PSA) & +13.2 V (PS
READPOINT
6
336
HOURS
HOURS
QUANTITY
80
80
FAILS FILE # DEVICE HRS
0
0
452720
24899612
HIGH TEMPERATURE OPERATING LIFE
FAILURE RATE
DEVICE HRS:
MTBF (yrs):
2.54E+07
3158
TOTALS:
FITs:
0
36
PRODUCT
DS1808
REV
A2
DIE SIZE (x)
159
DIE SIZE (y)
80
No. of Transistors
1700
Thursday, May 16, 2002
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