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DS1265Y/AB

8M Nonvolatile SRAM

www.maxim-ic.com

FEATURES

摟

摟

摟

摟

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摟

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10 years minimum data retention in the

absence of external power

Data is automatically protected during power

loss

Unlimited write cycles

Low-power CMOS operation

Read and write access times as fast as 70 ns

Lithium energy source is electrically

disconnected to retain freshness until power is

applied for the first time

Full

鹵10%

V

CC

operating range (DS1265Y)

Optional

鹵5%

V

CC

operating range

(DS1265AB)

Optional industrial temperature range of

-40擄C to +85擄C, designated IND

PIN ASSIGNMENT

NC

NC

A18

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

20

19

V

CC

A19

NC

A15

A17

WE

A13

A8

A9

A11

OE

A10

CE

DQ7

DQ6

DQ5

DQ4

DQ3

36-Pin ENCAPSULATED PACKAGE

740-mil EXTENDED

PIN DESCRIPTION

A0 - A19

DQ0 - DQ7

CE

WE

OE

V

CC

GND

NC

- Address Inputs

- Data In/Data Out

- Chip Enable

- Write Enable

- Output Enable

- Power (+5V)

- Ground

- No Connect

DESCRIPTION

The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as

1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control

circuitry which constantly monitors V

CC

for an out-of-tolerance condition. When such a condition occurs,

the lithium energy source is automatically switched on and write protection is unconditionally enabled to

prevent data corruption. There is no limit on the number of write cycles which can be executed and no

additional support circuitry is required for microprocessor interfacing.

1 of 8

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