dallas semiconductor reliability report:
Process:
Metal:
Single Poly, Single Metal (Ti/TiN layers
Al / 0.5% Cu / 0.8% Si
0.6 碌m
DS1208
Standard Process
Gate Ox Thickness:
Cf:
Ea:
尾:
60%
0.7
1
160 脜
Passivation:
55
5.5
擄C
Volts
TEOS Oxide - Nitride
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Tuse:
Vuse:
DESCRIPTION
INFANT LIFE
HIGH VOLTAGE LIFE
VEHICLE
DS12885
REV DATE CODE
C1
C1
C1
C1
C1
C1
C1
C1
C1
C1
C1
C2
C2
C2
C2
C2
C2
C2
C2
9804
9804
9804
9804
9807
9807
9807
9807
9752
9752
9752
9808
9808
9808
9832
9832
9832
9835
9835
CONDITION
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
150C, 6.0 VOLTS
150C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
READPOINT
48
336
1000
1500
48
336
1000
1500
48
336
528
48
48
336
48
336
1000
48
336
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
QUANTITY
429
153
153
153
429
153
153
153
399
200
200
200
419
419
195
195
194
370
80
FAILS FILE # DEVICE HRS
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 22411
0
0
2646132
6606079
13054870
9830474
2646132
6606079
13054870
9830474
2461088
8635397
4934513
1233628
8634985
51809909
1202787
7216725
16553234
2282212
3454159
HIGH TEMPERATURE OPERATING LIFE
INFANT LIFE
HIGH VOLTAGE LIFE
DS12885
INFANT LIFE
HIGH VOLTAGE LIFE
DS2401
HIGH VOLTAGE LIFE
DS2401
HIGH VOLTAGE LIFE
DS2401
INFANT LIFE
OP-LIFE
DS2401
Wednesday, January 26, 2000
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