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DS1200S Datasheet

  • DS1200S

  • NOVRAM|128X8|CMOS|SOP|16PIN|PLASTIC

  • 19.15KB

  • 1頁

  • ETC

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DS1200
DS1200
Serial RAM Chip
FEATURES
PIN ASSIGNMENT
V
CC
RST
DQ
CLK
GND
1
2
3
4
5
10
9
8
7
6
NC
NC
GND
NC
V
BAT
鈥?/div>
1024 bits of read/write memory
鈥?/div>
Low data retention current for battery backup applica-
tions
鈥?/div>
4 million bits/second data rate
鈥?/div>
Single byte or multiple byte data transfer capability
鈥?/div>
No restrictions on the number of write cycles
鈥?/div>
Low-power CMOS circuitry
鈥?/div>
Applications include:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
software authorization
computer identification
system access control
secure personnel areas
calibration
automatic system setup
traveling work record
10-Pin DIP (300 MIL)
See Mech. Drawings
Section
V
CC
NC
RST
DQ
NC
CLK
NC
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
NC
NC
GND
NC
NC
NC
V
BAT
16-Pin SOIC (300 MIL)
See Mech. Drawings
Section
PIN DESCRIPTION
V
CC
RST
DQ
CLK
GND
V
BAT
NC
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
+5 Volts
RESET
Data Input/Output
Clock
Ground
Battery (+)
No Connection
DESCRIPTION
The DS1200 Serial RAM Chip is a miniature read/write
memory which can randomly access individual 8-bit
strings (bytes) or sequentially access the entire 1024-bit
contents (burst). Interface cost to a microprocessor is
minimized by on-chip circuitry which permits data trans-
fers with only three signals: CLOCK, RST, and DATA IN-
PUT/OUTPUT.
Nonvolatility can be achieved by connecting a battery of
2 to 4 volts at the battery input V
BAT
. A load of 0.5
碌A(chǔ)
should be used to size the external battery for the re-
quired data retention time. If nonvolatility is not required
the V
BAT
pin should be grounded.
For a complete description of operating conditions,
electrical characteristics, bus timing, and signal de-
scriptions other than V
BAT
, see the DS1201 Electronic
Tag 1024-Bit data sheet.
030598 1/1

DS1200S 產(chǎn)品屬性

  • Maxim Integrated Products

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