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High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
General Description
The DN2530 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex鈥檚 well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coef鏗乧ient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex鈥檚 vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
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Normally-on switches
Solid state relays
Converters
Linear ampli鏗乪rs
Constant current sources
Power supply circuits
Telecom
Ordering Information
BV
DSX
/
BV
DGX
300V
R
DS(ON)
(max)
12惟
I
DSS
(min)
200mA
Package Options
TO-243AA
1
DN2530N8
DN2530N8-G
TO-92
DN2530N3
DN2530N3-G
-G indicates package is RoHS compliant (鈥楪reen鈥?
1
Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
鹵20V
-55
O
C to +150
O
C
300
O
C
Pin Con鏗乬urations
D
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
S G D
G
D
S
TO-92
(front view)
TO-243AA
(top view)
DN2530_07相關(guān)型號(hào)PDF文件下載
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SUPERTEX
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