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High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
General Description
The DN2470 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex鈥檚 well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coef鏗乧ient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex鈥檚 vertical DMOS FET is ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Applications
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Normally-on switches
Solid state relays
Converters
Linear ampli鏗乪rs
Constant current sources
Battery operated systems
Telecom
Ordering Information
BV
DSX
/BV
DGX
700V
R
DS(ON)
(max)
42惟
I
DSS
(min)
500mA
Package Options
TO-252 (D-PAK)
DN2470K4-G
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
鹵20V
-55
O
C to +150
O
C
300
O
C
Package Option
Drain
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Gate
Source
TO-252 (D-PAK)
(top view)
DN2470_07相關(guān)型號PDF文件下載
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