DMN600V
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
D
G
B C
A
SOT-563
Dim
A
B
C
D
G
SEE NOTE 1
K
H
M
Min
0.15
1.10
1.55
0.90
1.50
0.56
0.10
0.10
Max
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.30
0.18
Typ
0.25
1.20
1.60
1.00
1.60
0.60
0.20
0.11
H
K
L
M
Mechanical Data
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Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminals: Lead bearing terminal plating available. See
Ordering information Page 2, Note 6
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
S
2
G
2
D
2
G
1
L
S
1
All Dimensions in mm
D
1
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Pulsed
Continuous
Pulsed
V
GSS
I
D
I
DM
P
d
R
qJA
T
j
, T
STG
Value
60
60
鹵20
鹵40
280
1.5
150
833
-55 to +150
Units
V
V
V
mA
A
mW
擄C/W
擄C
Characteristic
Drain-Gate Voltage R
GS
攏
1.0MW
Gate-Source Voltage (Note 3)
Drain Current (Note 3)
Drain Current (Note 3)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180擄 rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added Lead.
DS30673 Rev. 1 - 5
1 of 3
www.diodes.com
DMN600V
茫
Diodes Incorporated
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2
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