DMN5L06W
Lead-free Green
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
路
路
路
路
路
路
路
路
路
N-Channel MOSFET
Low On-Resistance
Very
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
鈥淕reen鈥?Device (Note 3)
K
G
G
H
M
S
A
D
B C
SOT-323
Dim
A
B
C
D
E
G
H
J
K
J
D
F
L
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0擄
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8擄
0.65 Nominal
Mechanical Data
路
路
路
路
路
路
路
路
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish
戮
Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
L
M
a
Drain
All Dimensions in mm
Gate
Source
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
DSS
V
DGR
Continuous
Pulsed
Continuous
Pulsed
V
GSS
I
D
I
DM
P
d
R
qJA
T
j
, T
STG
Value
50
50
鹵20
鹵40
280
1.5
200
625
-55 to +150
Units
V
V
V
mA
A
mW
擄C/W
擄C
Characteristic
Drain-Gate Voltage R
GS
攏
1.0MW
Gate-Source Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc鈥檚 鈥淕reen鈥?policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
.
DS30613 Rev. 3 - 2
1 of 4
www.diodes.com
DMN5L06W
茫
Diodes Incorporated
1
2
3
4
