DMN5L06DMK-7 Datasheet

IC型號：
DMN5L06DMK-7
PDF描述：
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
文件大?。?/label>
135.78KB
PDF頁數(shù)：
5頁
芯片廠家：
DIODES

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SPICE MODEL: DMN5L06DMK

Lead-free Green

DMN5L06DMK

DUAL N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT

Features

路

Dual N-Channel MOSFET

Low On-Resistance

Very Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Up To 2kV

"Green" Device (Note 4)

Qualified to AEC-Q101 standards for High Reliability

B C

SOT-26

Dim

Min

0.35

1.50

2.70

戮

2.90

1.00

0.35

0.10

0擄

Max

0.50

1.70

3.00

戮

3.10

1.30

0.55

0.20

8擄

Typ

0.38

1.60

2.80

0.95

0.55

3.00

0.05

1.10

0.40

0.15

戮

0.013 0.10

Mechanical Data

路

Case: SOT-26

Case Material: Molded Plastic, 鈥淕reen鈥?Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Finish

戮

Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

Marking: See Page 2

Ordering & Date Code Information: See Page 2

Weight: 0.015 grams (approximate)

All Dimensions in mm

ESD protected up to 2kV

Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

@ T

= 25擄C unless otherwise specified

Characteristic

Symbol

DSS

GSS

Continuous

Pulsed (Note 3)

qJA

, T

STG

Value

鹵20

305

800

225

556

-65 to +150

Units

擄C/W

擄C

Total Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width

攏10mS,

Duty Cycle

攏1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30927 Rev. 2 - 2

1 of 5

www.diodes.com

DMN5L06DMK

茫

Diodes Incorporated

標準包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
2 個 N 溝道（雙）
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
50V
電流 - 連續(xù)漏極(Id) @ 25° C
305mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
2 歐姆 @ 50mA @ 5V
Id 時的 Vgs(th)（最大）
1V @ 250µA
閘電荷(Qg) @ Vgs
-
輸入電容 (Ciss) @ Vds
50pF @ 25V
功率 - 最大
400mW
安裝類型
表面貼裝
封裝/外殼
SOT-23-6
供應(yīng)商設(shè)備封裝
SOT-26
包裝
帶卷 (TR)
其它名稱
DMN5L06DMKDITR

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