DME800
800 Watts, 50 Volts
Pulsed Avionics 1025 to 1150 MHz
GENERAL DESCRIPTION
The DME800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width
and duty required for DME applications. The device has gold thin-film
metalization for proven highest MTTF. The transistor includes input and output
prematch for broadband capability. Low thermal resistance package reduces
junction temperature, extends life.
CASE OUTLINE
55ST-1
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
2500
Device Dissipation @25擄C
1
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
65
Emitter to Base Voltage (BV
ebo
)
3
Collector Current (I
c
)
50
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
擄C
擄C
ELECTRICAL CHARACTERISTICS @ 25擄C
SYMBOL
P
out
P
g
畏
c
R
L
Tr
Pd
VSWR
CHARACTERISTICS
Power Out
Power Gain
Collector Efficiency
Return Loss
Rise Time
Pulse Droop
Load Mismatch Tolerance
1
TEST CONDITIONS
Pulse Width = 10 碌s,
Pin = 100 Watts
Vcc = 50 Volts
F = 1025-1150 MHz
Long Term Duty Factor = 1%
MIN
800
9.0
40
-9
TYP
MAX
1000
10.0
UNITS
W
dB
%
dB
200
0.7
3.0:1
ns
dB
F = 1025 MHz
FUNCTIONAL CHARACTERISTICS @ 25擄C
BV
ebo
BV
ces
h
FE
胃jc
2
NOTES:
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC 鈥?Current Gain
Thermal Resistance
1. At rated output power and pulse conditions
2. At rated pulse conditions
I
e
= 20 mA
I
c
= 50 mA
V
ce
= 5V, I
c
= 600mA
3.5
65
20
0.04
0.06
V
V
擄C/W
Issued June 2003
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at
www.advancedpower.com
or contact our factory direct.
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