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DME2333-230 Datasheet

  • DME2333-230

  • SCHOTTKY MEDIUM BARRIER DIODE

  • 1頁(yè)

  • ASI

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DME2333-230
SCHOTTKY MEDIUM BARRIER DIODE
PACKAGE STYLE 820
DESCRIPTION:
The
ASI DME2333-230
is a Medium
Barrier Schottky Diode designed for
General Purpose Mixer Applications.
FEATURES INCLUDE:
鈥?/div>
Small size
鈥?/div>
Ideal for MIC
MAXIMUM RATINGS:
I
C
P
DISS
T
J
T
STG
JC
100 mA
75 mW @ T
A
= 25 擄C
-65 擄C to +175 擄C
-65 擄C to +175 擄C
2000 擄C/W
NONE
CHARACTERISTICS
SYMBOL
V
B
V
F
R
S
C
J
I
R
= 10 碌A(chǔ)
I
F
= 1 mA
I
F
= 5.0 mA
V
R
= 0 V
T
C
= 25 擄C
TEST CONDITIONS
MINIMUM
3.0
350
f = 1.0 MHz
0.05
TYPICAL
MAXIMUM
450
13
0.15
UNITS
V
mV
鈩?/div>
pF
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1202
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1

DME2333-230相關(guān)型號(hào)PDF文件下載

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  • 英文版
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    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
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  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC [ETC]
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC [ETC]
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC [ETC]
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC [ETC]
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC [ETC]
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC
  • 英文版
    Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
    ETC [ETC]

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