DMBT9022
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
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Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and
Switching
High Current Gain
SOT-23
A
C
TOP VIEW
B
E
D
G
H
K
J
L
M
E
B
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Mechanical Data
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Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K1S
Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
DMBT9022
50
40
5.0
100
225
556
-55 to +150
Unit
V
V
V
mA
mW
K/W
擄C
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Notes:
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
C
obo
Min
50
40
5.0
戮
戮
270
戮
2.0 Typ.
Max
戮
戮
戮
500
500
630
0.4
3.5
Unit
V
V
V
nA
nA
戮
V
pF
Test Condition
I
C
= 50mA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 50mA, I
C
= 0
V
CB
= 30V
V
EB
= 4.0V
I
C
= 1.0mA, V
CE
= 6.0V
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 12V, f = 1.0MHz, I
E
= 0
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
攏
300ms, duty cycle
攏
2%.
DS30056 Rev. 2P-5
1 of 1
DMBT9022
1
