DC COMPONENTS CO., LTD.
R
DMBT8550
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
SOT-23
Pinning
1 = Base
2 = Emitter
3 = Collector
1
3
.020(0.50)
.012(0.30)
.063(1.60)
.055(1.40)
.108(0.65)
.089(0.25)
2
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-25
-20
-5
-500
225
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.026(0.65)
.010(0.25)
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.004
Max
(0.10)
C
.027(0.67)
.013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
(1)
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
-25
-20
-5
-
-
-
-
120
150
2%
Typ
-
-
-
-
-
-
-
-
-
Max
-
-
-
-1
-0.1
-0.6
-1.2
400
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
-
MHz
Test Conditions
I
C
=-10碌A(chǔ)
I
C
=-1mA
I
E
=-10碌A(chǔ)
V
CB
=-20V
V
EB
=-3V
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
I
C
=-50mA, V
CE
=-1V
I
C
=-20mA, V
CE
=-10V, f=100MHz
V
CE(sat)
V
BE(sat)
h
FE
f
T
Transition Frequency
(1)Pulse Test: Pulse Width
380碌s, Duty Cycle
Classification of h
FE
Rank
Range
C
120~200
D
150~350
E
250~400
1
