DC COMPONENTS CO., LTD.
R
DMBT4401
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
2 = Emitter
3 = Collector
1
3
.063(1.60)
.055(1.40)
.108(0.65)
.089(0.25)
2
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
60
40
6
600
225
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
.0043(0.11)
.0035(0.09)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
(1)
Min
60
40
6
-
-
-
-
-
20
40
80
100
40
250
-
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
0.4
0.75
0.95
1.2
-
-
-
300
-
-
6.5
Unit
V
V
V
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
I
C
=100碌A
I
C
=1mA
I
E
=10碌A
V
CE
=35V, V
EB
=0.4V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=0.1mA, V
CE
=1V
I
C
=1mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
I
C
=150mA, V
CE
=1V
I
C
=500mA, V
CE
=2V
I
C
=20mA, V
CE
=10V, f=100MHz
V
CB
=5V, f=1MHz
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
DC Current Gain
(1)
h
FE3
h
FE4
h
FE5
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
f
T
C
ob
380碌s, Duty Cycle
1
