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DL4448 Datasheet

  • DL4448

  • 500mW 100Volt Switching Diode

  • 353.48KB

  • 3頁

  • MCC   MCC

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MCC
Features
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  omponents
21201 Itasca Street Chatsworth

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DL4448
Low Current Leakage
Metalurgically Bonded Construction
Low Cost
500mW 100Volt
Switching Diode
MINIMELF
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Maximum Ratings
Operating Temperature: -55擄C to +150擄C
Storage Temperature: -55擄C to +150擄C
Maximum Thermal Resistance; 35
擄C/W
Junction To Ambient
Cathode Mark
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction
Temperature
Peak Forward Surge
Current
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
V
R
V
RM
I
O
P
TOT
T
J
I
FSM
V
F
75V
100V
B
C
150mA
500mW
150擄C
500mA
Resistive Load
f > 50Hz
A
t<1s
DIMENSIONS
DIM
A
B
C
INCHES
MIN
.134
.008
.055
MAX
.142
.016
.059
MM
MIN
3.40
.20
1.40
MAX
3.60
.40
1.50
NOTE
1.0V(MAX)
I
FM
= 100mA;
0.62-0.72V
I
FM
= 5.0mA
I
R
25nA
5.0uA
50碌A(chǔ)
4pF
V
R
=20Volts
T
J
=25擄C V
R
=75V
T
J
=150擄C V
R
=20V
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SUGGESTED SOLDER
PAD LAYOUT
0.105
Measured at
1.0MHz, V
R
=4.0V
T
rr
4nS
I
F
=10mA
V
R
= 6V
R
L
=100鈩?/div>
*Pulse test: Pulse width 300
碌sec,
Duty cycle 2%
C
J
0.075鈥?/div>
0.030鈥?/div>
www.mccsemi.com

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